Data di Pubblicazione:
2005
Abstract:
Semiconducting tin oxide can be successfully deposited by means of the laser ablation technique.
In particular by ablating metallic tin in a controlled oxygen atmosphere, thin films of SnOx have
been deposited. The partial oxygen pressure at which the films are deposited strongly influences
both the stoichiometry and the structural properties of the films. In this work, we present a study
of the expansion dynamics of the plasma generated by ablating a tin target by means of a pulsed
laser using time and space resolved optical emission spectroscopy and fast photography imaging of
the expanding plasma. Both Sn I and Sn II optical emission lines have been observed from the timeintegrated
spectroscopy. Time resolved-measurements revealed the dynamics of the expanding plasma
in the ambient oxygen atmosphere. Stoichiometry of the films has been determined by means of X-ray
photoelectron spectroscopy and correlated to the expansion dynamics of the plasma.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Laser-generated plasma;SnOx films; Laser ablation; Thin Films
Elenco autori:
Trusso, Sebastiano; Fazio, Barbara
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