Synthesis of GaN quantum dots by ion implantation in dielectrics

GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions into either crystalline (quartz, sapphire) or amorphous (silica) dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. GaN was formed by reaction of implanted Ga with NH3 combustion products and/or via conversion of Ga oxide/oxynitrides. A blueshift of the near-band-edge photoluminescence (quantum-confinement effect) was observed for GaN nanocrystals with size less than or equal to2-3 nm, present in all the substrates.