Ion channeling study of P implantation damage in CdTe

Phosphorus implantation was performed on single-crystal samples of [111] CdTe at incident energies of 50, 100 and 200 keV, with fluences up to 4×1016Pcm2. All implants were done at room temperature with current densities below 0.2 ?A/cm2. In order to investigate the damage produced, Rutherford backscattering of 4He particles in channeling condition was done in situ at several energies. The dependence of the dechanneling upon the incident 4He beam energy allowed us to characterize the nature of the implantation induced defects. We describe the evolution of the damage resulting from P implantation in CdTe as a function of fluence and implantation energy. In order to understand the nature of the damage, 100 keV P implantations were also monitored with in situ transmission electron muscopy (TEM).