Growth of InP with novel In and P precursors

This contribution presents the results of growth kinetic studies using trimethylindium-diisopropylamine adduct as an In precursor and isopropylphosphine as a group V source for the MOVPE (metalorganic vapor phase epitaxy) of InP. For comparison, experiments using the standard sources trimethylindium and PH 3 and combinations of both approaches were also performed. From the dependence of the growth rate on temperature it can be concluded that specifically the use of the organic P source with TMI may lead to a pronounced reduction of the rate due to parasitic reactions involving both precursors. The coordinatively saturated adduct is a suitable reaction partner for the organic P precursor with respect to reducing prereactions. For all material combinations satisfactory electrical and luminescence properties of the InP layers were obtained.