Data di Pubblicazione:
1999
Abstract:
The surface atomic structure of the molecular-beam epitaxy prepared As-rich InAs(100) (2×4) reconstruction has been solved by synchrotron radiation surface x-ray diffraction. Analysis of a large set of nonequivalent in-plane diffraction peaks and seven out-of-plane rods yields the so-called ?2-(2×4) model, a now recognized model for the As-rich GaAs(100) (2×4) structure. The structure comprises two As dimers in the top layer and one As dimer in the third layer below the first incomplete In layer. ©1999 The American Physical Society.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
material science
Elenco autori:
Cricenti, Antonio
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