Ablation of silicon with bursts of femtosecond laser pulses

We report on an experimental investigation of ultrafast laser ablation of silicon with bursts of pulses. The pristine 1030nm-wavelength 200-fs pulses were split into bursts of up to 16 sub-pulses with time separation ranging from 0.5ps to 4080ps. The total ablation threshold fluence was measured depending on the burst features, finding that it strongly increases with the number of sub-pulses for longer sub-pulse delays, while a slowly increasing trend is observed for shorter separation time. The ablation depth per burst follows two different trends according to the time separation between the sub-pulses, as well as the total threshold fluence. For delays shorter than 4ps it decreases with the number of pulses, while for time separations longer than 510ps, deeper craters were achieved by increasing the number of subpulses in the burst, probably due to a change of the effective penetration depth.