Near-infrared Erbium/Silicon Schottky photodetectors integrated with a silicon-on-insulator waveguide
Conference Paper
Publication Date:
2019
abstract:
In this work we have investigated the performance of photodetectors at 1550nm based on Erbium/Silicon (Er/Si) Schottky
junctions integrated with silicon-on-insulator (SOI) waveguides. Devices are based on the internal photoemission effect
(IPE) which is a promising candidate as absorption mechanism for near infrared (NIR) photodetection in Si.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
optoelectronic device; NIR photodetector in Si
List of contributors: