Near-infrared Erbium/Silicon Schottky photodetectors integrated with a silicon-on-insulator waveguide
Contributo in Atti di convegno
Data di Pubblicazione:
2019
Abstract:
In this work we have investigated the performance of photodetectors at 1550nm based on Erbium/Silicon (Er/Si) Schottky
junctions integrated with silicon-on-insulator (SOI) waveguides. Devices are based on the internal photoemission effect
(IPE) which is a promising candidate as absorption mechanism for near infrared (NIR) photodetection in Si.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
optoelectronic device; NIR photodetector in Si
Elenco autori:
Crisci, Teresa; Iodice, Mario; Gioffre', MARIANO ANTONIO; Casalino, Maurizio; Medugno, Mario
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