Conductive Cu-TiO2 thin films obtained via MOCVD

Growths of nanophased Cu, CuO, Cu-TiO2 and Cu2O-TiO2 thin films were performed by using titanium tetraisopropoxide Ti(OiPr)4, and copper(II) acetylacetonatehydrate Cu(acac)2 H2O in the temperature range 275-370 °C. The composite Cu-TiO2 with very low percent of titanium dioxide (TiO2<5%) can be an alternative procedure to obtain well adherent, smooth and well connected Cu films. Cu2O-TiO2 were obtained by annealing of Cu-TiO2 thin films. Cu2O in a TiO2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in the visible region.