Data di Pubblicazione:
2006
Abstract:
We present an unconventional scheme for acoustic charge transport devices based on a n-i-n lateral junction as electron injector. We show that surface acoustic waves (SAWs) are able to pick up electrons from a current flowing through the n-i-n junction and steer them towards the Ohmic output contact. Acoustic charge transport was studied at various temperatures, as a function of injector current, voltage bias, and SAW power. The possibility to modulate the acoustoelectric current by means of lateral in-plane gates is also discussed. The main advantage of our approach relies on the possibility to drive the n-i-n injector by means of both voltage and current sources, thus allowing to sample and process voltage and current signals. (c) 2006 American Institute of Physics.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Surface acoustic wave; quantum transport; acoustoelectric current; lateral junction; semiconductor heterostructure; quantum well; Gallium Arsenide
Elenco autori:
DE SIMONI, Giorgio
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