Engineered Schottky barriers on n-In(0.35)Ga(0.65)As

The Schottky barrier height in Al/n-In(0.35)Ga(0.65)As was engineered using thin p-type near-interface In(0.35)Ga(0.65)As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved.