Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures
Academic Article
Publication Date:
2000
abstract:
The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well
Iris type:
01.01 Articolo in rivista
Keywords:
Quantum dots; Quantum wells; Molecular beam epitaxy growth of embedded heterostructures
List of contributors:
Franchi, Secondo; Gombia, Enos; Frigeri, Paola; Mosca, Roberto
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