Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Articolo
Data di Pubblicazione:
2000
Abstract:
The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Quantum dots; Quantum wells; Molecular beam epitaxy growth of embedded heterostructures
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/193369
Pubblicato in:
THIN SOLID FILMS
Journal