1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface

We investigate the temperature-induced phase transition on Si-terminated beta-silicon carbide (SiC)(100) surface using scanning tunneling microscopy (STM) and spectroscopy, and valence band and core level photoemission spectroscopies using synchrotron radiation, Above 700 K, the 2 x 1 surface exhibits metallization with a non-Fermi liquid power law shape spectral response near the Fermi level. This suggests a surface having one-dimensional (1D) metallicity related to the Si-Si dimers rows constituting the topmost atomic layer. This behavior can be related to the Luttinger liquid model.