Group III-V and II-VI Nanowires

In this contribution a review on the studies based on X-ray absorption
spectroscopy (XAS) on III-V and II-VI nanowires in the recent years is presented.
Examples of structural characterization of several systems like pure semiconductors
(mainly ZnO, ZnS, GaN) and doped materials (with transitionmetals Co, Mn, Fe and
rare earth ions Eu, Er) are presented. XAS in the various cases has played amajor role
in explaining the observed physical properties or to validate new production routes.
Advanced data collection and analysis methods like micro-XAS, site selective XAS
via optical emission, comparison between XAS and results of structural modeling
have demonstrated to be valuable tools for a more complete understanding of the
XAS data.