Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions

In this work we investigate the influence of defects injected by ions of different mass and energy on the diffusion of B and Sb markers in bulk Si. MeV (Si or As) ions induce Sb transient enhanced diffusion, whose amount increases with increasing the near-surface vacancy supersaturation generated by the knock-on recoil mechanism. The enhancement effect lasts less than 2 h at 800 degrees C and less than 10 min at 900 degrees C. At higher (1000 degrees C) annealing temperature it appears that the influence of extra-interstitials introduced by the implants comes into play, inducing a retardation in Sb diffusion which is larger for the higher dose implant. The effect of vacancy supersaturation observed in medium-energy implanted samples is considerably weaker than the one found in high-energy implanted ones. In the case of B marker high-energy implantation induces moderate enhanced diffusion, much smaller than the one observed after medium-energy implants.