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Torus Breakdown in a Uni Junction Memristor

Academic Article
Publication Date:
2018
abstract:
Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) vM-iM characteristic for modeling the UJT's DC current-voltage characteristic. This has led us to confirm on the one hand, that the UJT is a memristor and, on the other hand, to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
Iris type:
01.01 Articolo in rivista
Keywords:
Uni junction transistor; memristor; torus breakdown; bifurcation
List of contributors:
DI GARBO, Angelo
Authors of the University:
DI GARBO ANGELO
Handle:
https://iris.cnr.it/handle/20.500.14243/391295
Published in:
INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS IN APPLIED SCIENCES AND ENGINEERING
Journal
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URL

http://www.scopus.com/inward/record.url?eid=2-s2.0-85054030533&partnerID=q2rCbXpz
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