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Torus Breakdown in a Uni Junction Memristor

Articolo
Data di Pubblicazione:
2018
Abstract:
Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) vM-iM characteristic for modeling the UJT's DC current-voltage characteristic. This has led us to confirm on the one hand, that the UJT is a memristor and, on the other hand, to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Uni junction transistor; memristor; torus breakdown; bifurcation
Elenco autori:
DI GARBO, Angelo
Autori di Ateneo:
DI GARBO ANGELO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/391295
Pubblicato in:
INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS IN APPLIED SCIENCES AND ENGINEERING
Journal
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