Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs

Academic Article
Publication Date:
2010
Iris type:
01.01 Articolo in rivista
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/431216