Data di Pubblicazione:
1989
Abstract:
The space-charge density variation induced by illumination in metal-insulator-amorphous-semiconductor structures has been observed for the first time by monitoring the transient photocurrent. The dependence of the charge variation on the gate voltage provides a useful tool for the flatband voltage determination
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Mariucci, Luigi; Fortunato, Guglielmo
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