Nanocrystal MOS with silicon-rich oxide

Conference Paper
Publication Date:
2002
abstract:
By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Handle:
https://iris.cnr.it/handle/20.500.14243/171871
Published in:
DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA
Journal