Nanocrystal MOS with silicon-rich oxide

Contributo in Atti di convegno
Data di Pubblicazione:
2002
Abstract:
By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Elenco autori:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/171871
Pubblicato in:
DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA
Journal