Dopant profile investigation in low-energy scanning transmission electron microscopy

Scanning Electron Microscopy has been used in a transmission mode. The image is formed with the secondary electrons, collected by the standard detector, resulting from the conversion of transmitted electrons. Operating in bright field and dark field imaging mode, at 20 and 30 keV, As dopant profile in Si, having a peak concentrations of 5%, and a spatial extension of about 40 nm and 20 nm, have been observed in cross sectioned specimens.