Carrier distribution in quantum nanostructures studied by scanning capacitance microscopySolid State Microscopy of Semiconducting

We addressed issues related to quantitative carrier profiling by scanning capacitance microscopy (SCM) on doped layers with different dimensions, starting from thick (similar to 5 mu m) uniformly doped Si layers down to Si/Si1-xGex/Si quantum wells with nanometre width. We preliminarily discuss the influence of the SCM hardware oil the quantification, by comparing the analyses performed on Si calibration standards with two different atomic force microscopes, i.e. DI3100 by Veeco and XE-100 by PSIA, equipped with different SCM sensors. Furthermore, concentration sensitivity and spatial resolution are deeply discussed considering measurements on special designed samples containing quantum wells Of Si0.75Ge0.25 layers strained between Si films. Measurements were taken on sample cross-sections and oil bevelled samples. A nanometre SCM spatial resolution was demonstrated not only in terms of signal sensitivity, but also in terms of quantitative majority carrier profiling.