Publication Date:
2022
abstract:
In this paper we initially present two CNTFET models: the first is already proposed by us and the second is the Stanford model, proposing a method to match the output characteristics and transconductance characteristics between these two models. Then we describe a compact noise model, used to simulate the performance of a NOT gate, in order to analyze how the noise sources constitute a significant limitation in the design of circuits based on CNTFET. All simulations are obtained using the programming language Verilog-A on the simulator Advanced Design System (ADS), highlighting the solutions proposed in order to use this software.
Iris type:
01.01 Articolo in rivista
Keywords:
Advanced designs; Design systems; Noise effects; Noise models; Noise source; NOT gate; Output characteristics; Performance; Stanford; Verilog-A
List of contributors:
Marani, Roberto
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