Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown at 600 degreesC by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of the tertiarybuthylarsine (TBAs) and tertiarybuthylphosphine (TBP) group-V sources. In order to enhance the interface abruptness, different gas switching sequences were exploited during the growth of the interface, and the best results were obtained by inserting a few monolayer-thick GaAsP interlayers (IL), at the direct GaAs-on-InGaP interface. Low-temperature photoluminescence (PL), high resolution X-ray diffraction, transmission electron microscopy and photoreflectance spectroscopy analysis were performed on the grown heterostructures, to correlate the adopted growth sequence with the interface properties and the QW optical transitions.