Publication Date:
2000
abstract:
Al/InxGa1-xAs(001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2
Iris type:
01.01 Articolo in rivista
List of contributors:
Franciosi, Alfonso; Sorba, Lucia; Lazzarino, Marco; Rubini, Silvia
Published in: