CdTe epitaxial layers in ZnSe-based heterostructures

We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 View the MathML source]ZnSe?[1 1 0]GaAs and [1 View the MathML source 0]ZnSe?[1 View the MathML source 0]GaAs epitaxial relations.