Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs

Academic Article

Publication Date:

1999

abstract:

The Schottky barrier height at Al/n-InxGa1-xAs contacts (0.19

Iris type:

01.01 Articolo in rivista

List of contributors:

Authors of the University:

LAZZARINO MARCO

RUBINI SILVIA

SORBA LUCIA

Handle:

Published in:

Journal