Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, SPL and EBIC

Four high spatial resolution techniques (DSL, SEM, SPL, EBIC) turned out to be effective in mapping individual alpha and beta dislocations induced by micro-indentation in LEC GaAs and InP. A one-to-one correlation between all these methods is demonstrated. Surface profiling and SEM imaging showed that alpha and beta dislocations exhibit a different behaviour upon DSL etching. The possible reason for such behaviour is explained in terms of the different core structure of the alpha and beta dislocations. On the basis of DSL etch features on the indentation rosettes the mechanisms of dislocation motion are discussed