Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn

Zn3P2 precipitates are identified by SAD in dislocation-free LEC InP heavily doped to the saturation hole density of 3.0-10(18) cm(-3) by adding 1.10(19) Zn at/cm(3). The calculated density of Zn atoms forming the precipitates shows that precipitation is not the sole mechanism responsible for the saturation of the hole density. The features of the transition from dislocation-free to dislocated crystal observed by slightly decreasing the doping level are related to the LEC growth conditions.