QUANTITATIVE-ANALYSIS OF ALXGA1-XAS/GAAS MULTIQUANTUM WELLS BY MEANS OF AES DEPTH PROFILING AND SMALL AREA XPS

Academic Article
Publication Date:
1993
abstract:
By means of Auger electron spectroscopy (AES) depth profiling and small area X-ray photoelectron spectroscopy (XPS), the chemical composition of the AlxGa1-xAs layer in a series of reference AlxGa1-xAs/GaAs (0.15
Iris type:
01.01 Articolo in rivista
Keywords:
AUGER-ELECTRON SPECTROSCOPY; Aluminum gallium arsenide; Depth profiling; Multiquantum wells (MQW); Sputtering ion energy
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/179201
Published in:
APPLIED SURFACE SCIENCE
Journal