QUANTITATIVE-ANALYSIS OF ALXGA1-XAS/GAAS MULTIQUANTUM WELLS BY MEANS OF AES DEPTH PROFILING AND SMALL AREA XPS

Articolo
Data di Pubblicazione:
1993
Abstract:
By means of Auger electron spectroscopy (AES) depth profiling and small area X-ray photoelectron spectroscopy (XPS), the chemical composition of the AlxGa1-xAs layer in a series of reference AlxGa1-xAs/GaAs (0.15
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
AUGER-ELECTRON SPECTROSCOPY; Aluminum gallium arsenide; Depth profiling; Multiquantum wells (MQW); Sputtering ion energy
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/179201
Pubblicato in:
APPLIED SURFACE SCIENCE
Journal