Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy

In the last few years the research efforts have been addressed to relaxed Si1-xGex buffer layers on Si substrate reported to as 'virtual substrates'. This paper focuses on the relaxation mechanism of Si1-xGex/Si(1 0 0) heterostructures grown by solid source molecular beam epitaxy. On this purpose. we have grown samples with different Ge concentrations (0.035