Simulation of the transformation from the C49 to the C54 phase of TiSi2 in blanket films and narrow conductors

The C49-C54 phase transition has been simulated by Monte-Carlo calculations in blanket films and conductors using a unitary model based on transient nucleation and growth which takes into account the temperature dependence of the nucleation parameters. The output of the model has been compared with experimental data from electrical measurements in blanket films and 0.5 mum wide conductors. The comparison allows us to determine the density of available nucleation sites and to interpret the spread of experimental data, observed in the case of lines, as fluctuations in the number of sites and in their random location.