Transient enhanced diffusion and ostwald ripening of ion-implantation generated defects in silicon

We report a study of transient enhanced diffusion arising from Ostwald ripening of Si implant-generated defects. Early during annealing, small interstitial clusters with low binding energy give rise to a large interstitial supersaturation, S(t) similar to 10(7), which drops to a nearly constant level similar to 10(4) as the clusters ripen into {113} defects. Inverse modelling of Ostwald ripening yields the dissociation energy, E-diss, as a function of size. Based on this model we predict trends in TED as a function of implant dose and RTA ramp rate.