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CRYSTAL-GROWTH AND X-RAY STRUCTURAL INVESTIGATION OF 2 FORMS OF HGGA2TE4

Articolo
Data di Pubblicazione:
1985
Abstract:
We have synthesized the HgGa2Te system in two different forms showing cubic and tctragonal symmetry, respectively. Single crystals of alpha-HgGa2 Te 4 suitable for X-ray investigations were obtained by crystallization of the polycrystalline compound using KBr as flux. The X-ray analysis showed a cubic blende-type structure with cations and vacancies disordered on the metallic sites, in agreement with the model proposed by Hahn. Single crystals of beta- HgGa2Te4 were prepared by chemical vapour deposition. The x-ray structural investlgation indicated a partially ordered defect chalcopyrite structure.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
chalcopyrite; XRD; Structure; Chemical Vapour deposition; single crystal
Elenco autori:
Agostinelli, Elisabetta; Gastaldi, Leonardo; Viticoli, Sesto
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/200095
Pubblicato in:
MATERIALS CHEMISTRY AND PHYSICS
Journal
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http://biblioproxy.cnr.it:2065/10.1016/0254-0584(85)90101-4
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