Distribution of the Threshold Voltage Window in Nanocrystal Memories with Si Dots Formed by Chemical Vapor Deposition: Effect of Partial Self-Ordering

Conference Paper

Publication Date:

2004

Iris type:

04.01 Contributo in Atti di convegno

List of contributors:

Lombardo, SALVATORE ANTONINO; Puglisi, ROSARIA ANNA

Authors of the University:

LOMBARDO SALVATORE ANTONINO

PUGLISI ROSARIA ANNA

Handle:

https://iris.cnr.it/handle/20.500.14243/6536