Synthesis and characterization of zinc bis(O-isopropylxanthate) as single-source chemical vapor deposition precursor for ZnS

The utilization of single-source molecular precursors in chemical vapor deposition (CVD) experiments requires a deep knowledge of their chemico-physical properties, with particular regard to thermal stability and fragmentation pattern. This study describes the synthesis and characterization of zinc bis(O-isopropylxanthate), Zn(O-iPrXan)2, [O-iPrXan = (CH3)2CHOCS2], a single-source precursor for the CVD of zinc(II)sulfide thin films and nanorods. Several analytical methods yielding complementary information (extended X-ray absorption fine structure, Raman, FT-IR, UV-Vis optical absorption, 1H and 13C NMR, thermogravimetric analysis, differential scanning calorimetry as well as mass spectrometry techniques, i.e. electrospray and electron ionization, mass-analyzed ion kinetic energy) are adopted for a comprehensive investigation of purity, structure, thermal behavior and decomposition pathways of the molecule. The most significant results are discussed critically and the properties useful for CVD applications are highlighted.