Schottky-like behavior of the GaP(110)/Ag

We have performed a photoemission study of the Schottky barrier obtained by depositing Ag onto UHV cleaved GaP( 110) at room temperature. The barrier appears to be fully developed at a coverage of - 2 monolayers and its height is 1.1 eV. This figure is to be compared with higher (lower) values obtained with metals having a larger (smaller) work function than Ag, for example Cu and Au (In and AI) deposited onto the same surface. The result corroborates the idea that the metal-GaP ( 110) interface is a good example of the Schottky limit in metalsemiconductor junctions.