MOS capacitors fabricated on (0001) 4H-SiC implanted with N+ ions

Conference Poster
Publication Date:
2007
Iris type:
04.03 Poster in Atti di convegno
Keywords:
wide band gap semiconductor; 4H-SiC; electronic device; MOS; SiO2/SiC interface state density
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/86688