Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Conference Poster

Publication Date:

2007

Iris type:

04.03 Poster in Atti di convegno

Keywords:

wide band gap semiconductor; 4H-SiC; electronic device; MOSFET; channel mobility

List of contributors:

Moscatelli, Francesco; Poggi, Antonella; Cristiani, Stefano; Sanmartin, Michele; Nipoti, Roberta; Solmi, Sandro

Authors of the University:

CRISTIANI STEFANO

MOSCATELLI FRANCESCO

POGGI ANTONELLA

SANMARTIN MICHELE

Handle:

https://iris.cnr.it/handle/20.500.14243/86687