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Spontaneous Formation and Stability of GaP Cage Structures: A Theoretical Prediction of a New Fullerene

Abstract
Data di Pubblicazione:
2001
Abstract:
We report the spontaneous formation of a GaP fullerene cage in ab-initio Molecular Dynamics simulations starting from a bulk fragment. A systematic study of the geometric and electronic properties of neutral and ionized III-V (GaP, GaAs, AlAs, AIP) clusters suggests the stability of hetero-fullerenes formed by compounds with zincblend bulk structure. Our prediction is supported by several indicators: these clusters show closed electronic shells and relatively large energy gaps; the ratio between the cohesive energy per atom in the cluster and in the bulk is very close to the value found for carbon fullerenes of the same size; the clusters are thermally stable up to a temperature range of 1500-2000 K and they do not dissociate when ionized.
Tipologia CRIS:
04.02 Abstract in Atti di convegno
Keywords:
density functional theory; semiconductor clusters
Elenco autori:
Tozzini, Valentina
Autori di Ateneo:
TOZZINI VALENTINA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/6205
Pubblicato in:
MRS PROCEEDINGS
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URL

https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/div-classtitlespontaneous-formation-and-stability-of-gap-cage-structures-a-theoretical-prediction-of-a-new-fullerenediv/6E283489301EF108178CF5078F5C69A3
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