An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon

We have investigated and modeled the B diffusion in Si following ultralow energy implantation. Secondary ion mass spectrometry measurements revealed that B diffusion is transient enhanced. For the simulation we have used a kick-out model which requires only two uncorrelated parameters able to describe the microscopical processes involved. By optimizing the parameters, an excellent agreement between the simulated and the experimental profile broadening is achieved. Moreover, an extension of the previous model that accounts for interstitial cluster formation and dissolution was implemented in order to achieve a better description of B diffusion. The extracted parameters are discussed and compared with published values.