Point defect diffusion and clustering in ion implanted c-Si

This paper reviews some fundamental aspects of point defect migration and agglomeration in crystalline Si. Both in-situ and ex-situ measurements were used to reach this target. Room temperature (RT) diffusivities of 1.5 x 10(-15) and 3.0 x 10(-13) cm(2)/s for I and V, respectively, were obtained using in-situ leakage current measurements, performed during and just after ion implantation. To follow the defect evolution and clustering upon annealing, ex-situ optical and electrical measurements were used. Low temperature (300-500 degreesC) annealing causes the formation of point-like defects, while higher temperatures (500-800 degreesC) are necessary to have defect clustering, Finally, a well-defined dose (1 x 10(13) Si/cm(2) in pure Si) temperature (650 degreesC) and time thresholds exist for the transition from I-clusters to extended {3 1 1} defects. When the transition takes place, both the optical and electrical defect properties undergo a dramatic change, suggesting an abrupt structural transition in the evolution from I-cluster to {3 1 1} defects. Kinetic lattice Monte-Carlo simulations used to model the defect agglomeration and growth confirm these results.