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Optical and structural properties of ZnS grown by atomic layer epitaxy

Articolo
Data di Pubblicazione:
2001
Abstract:
Monocrystalline films of sphalerite-type ZnS are produced on (001) GaAs substrates by atomic layer epitaxy (ALE) in a gas flow system employing reactions of three different types. Properties of these ZnS films are compared. The best quality ZnS layers are obtained using either zinc chloride or elemental zinc as source of cation and H2S vapors as source of sulfur. These layers show flat surfaces and good spectral properties.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Girasole, Marco; Cricenti, Antonio
Autori di Ateneo:
CRICENTI ANTONIO
GIRASOLE MARCO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/457798
Pubblicato in:
JOURNAL OF WIDE BANDGAP MATERIALS
Journal
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