Modelling of Be diffusion in GaAs layers grown by MBE

Abstract
Publication Date:
2001
Iris type:
04.02 Abstract in Atti di convegno
Keywords:
diffusion phenomena; beryllium; GaAs; heterojunction bipolar transistor
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/211228