Hole capture by the DX center in AlGaAs Schottky barriers

Articolo
Data di Pubblicazione:
1994
Abstract:
At low temperatures the space charge distribution near the metal contact of Schottky barriers on n-type AlGaAs can be changed by the application of forward biases, so that C-V profiles are deformed. Such a phenomenon, which is related to hole injection in the carrier, is mainly ascribed to hole capture at the DX center.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Schottky barrier diodes; Aluminum gallium arsenide; DX center; Hole capture; Schottky barriers. Electric space charge
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/211226
Pubblicato in:
MATERIALS SCIENCE FORUM
Series