Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC

In this letter, we studied the effect of the annealing temperature (from 1400 to 1650 degrees C) on the acceptor, compensation, and mobility depth profiles in 4H-SiC implanted with multiple energy (40-550 keV) and medium dose (1x10(13) cm(-2)) Al ions. Scanning capacitance microscopy and scanning spreading resistance microscopy were jointly used to determine those depth profiles with nanometric resolution. It was demonstrated that the electrical activation in the Al implanted layer at increasing annealing temperatures was the result of a counterbalance between the increase in the acceptor concentration and the decrease in the percentage compensation.