Conducting In-doped CdTe oxide thin films grown by pulsed-laser deposition

Conducting transparent oxide semiconductor In-doped CdTe oxide (ICTO) thin films (similar to 200 nm thick) have been deposited by pulsed-laser deposition on glass substrates without a postdeposition anneal. The electrical, structural, and optical properties of these films have been investigated as a function of O-2 partial pressures during the deposition. Films were deposited at substrate temperature of 420 degrees C in oxygen partial pressures between 15 and 55 mTorr. The resistivity is very sensitive to the oxygen deposition pressure; at 28.5 mTorr the films show electrical resistivities as low as 9.4x10(-3) Omega cm, an average visible transmittance of similar to 75.5%, and an optical band gap of 2.74 eV. (c) 2005 American Institute of Physics.